Ruthenium Film with High Nuclear Density Deposited by MOCVD Using a Novel Liquid Precursor

Abstract

Ruthenium thin films were deposited on substrates at 260-500°C by metallorganic chemical vapor deposition (MOCVD) using a liquid precursor (2.4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp), DMPD: 2.4-dimethylpentadienyl, EtCp: ethylcyclopentadienyl]. The deposition characteristics and the electrical properties of the deposited films were compared with those using bis(ethylcyclopentadienyl)ruthenium precursor. The Ru films from Ru(DMPD)(EtCp) were deposited more stably than those from Both films consisted of Ru single phase for the entire deposition temperature range. Initial nucleation of Ru films from Ru(DMPD)(EtCp) was smaller in size and denser than that from Morover the deposition process from Ru(DMPD)(EtCp) has a much shorter incubation time than that from © 2003 The Electrochemical Society. All rights reserved.