Tetsuo Shibutami

Ruthenium Film with High Nuclear Density Deposited by MOCVD Using a Novel Liquid Precursor

Tetsuo Shibutami, Kazuhisa Kawano, Noriaki Oshima et al. · Electrochemical and Solid-State Letters · 2003 · 51 citations

Engineering, Chemistry, Chemical Deposition +16

Fabrication and characterization of polycrystalline BaSi₂ by RF sputtering

Nurul Amal Abdul Latiff, Takahiro Yoneyama, Tetsuo Shibutami et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013 · 47 citations

Thin Film Physics, Optical Materials, Engineering +16

Fatigue-free RuO2/Pb(Zr,Ti)O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395 °C

Gouji Asano, Hitoshi Morioka, Hiroshi Funakubo et al. · Applied Physics Letters · 2003 · 40 citations

Materials Engineering, Materials Science, Chemical Engineering +11

Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications

Takahiro Yoneyama, Atsushi Okada, Mitsushi Suzuno et al. · Thin Solid Films · 2013 · 35 citations

Materials Science, Radio-frequency Magnetron, Engineering +9

Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

Kazuhisa Kawano, Atsushi Nagai, Hiroaki Kosuge et al. · Electrochemical and Solid-State Letters · 2006 · 27 citations

Engineering, Chemistry, Chemical Deposition +16