Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

Abstract

Ruthenium thin films were deposited at on hole substrates by metallorganic chemical vapor deposition (MOCVD) using (-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium for the Ru source. The microstructure, conformability, crystallinity, and resistivity of the films were examined. Conformal films whose resistivity was below -cm were deposited below on hole substrates with aspect ratio of 1.7. Finally, conformal films with a step coverage of 97% were deposited on hole substrates, even those with a high aspect ratio of 6.4, by using without a seed layer.