Neutron Displacenent Effects in Epitaxial Gunn Diodes

Abstract

To correlate the performance of Gunn diodes in a radiation environment with the radiation-induced defects in the active epitaxial layer of the device, radiation effects on Gunn diodes and Hall bars grown simultaneously were investigated. This paper will assess the results that indicate that neutron-induced degradation in device efficiency is due to carrier removal, reduction of the peak-to valley-current ratio by low-field mobility degradation, and slow trapping of high-field conduction electrons.