General theory for pinched operation of the junction-gate FET

Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique

C. B. Norris, J. F. Gibbons · IEEE Transactions on Electron Devices · 1967 · 117 citations

Engineering, Electrical Engineering, Physics +14

Carrier mobility and current saturation in the MOS transistor

S.R. Hofstein, G. Warfield · IEEE Transactions on Electron Devices · 1965 · 87 citations

Engineering, Electrical Engineering, Microelectronics +16

Electron drift velocity in avalanching silicon diodes

C.Y. Duh, J.L. Moll · IEEE Transactions on Electron Devices · 1967 · 80 citations

Engineering, Electrical Engineering, Physics +17

Analysis of field effect transistors with arbitrary charge distribution

R. R. Bockemuehl · IEEE Transactions on Electron Devices · 1963 · 48 citations

Engineering, Electrical Engineering, Circuit Theory +16

Measurement of the drift velocity of holes in silicon at high-field strengths

Vincent Rodriguez, H. Ruegg, M.−A. Nicolet · IEEE Transactions on Electron Devices · 1967 · 41 citations

Engineering, Electrical Engineering, Physics +17