Applied Physics Letters · 1990 · 71 citations · 6 references
PhotonicsElectrical EngineeringEngineeringVc-sel DevicesSemiconductor LasersApplied PhysicsPlanar Lateral DefinitionVc-sel StructureLaser MaterialSemiconductor Device FabricationVertical-cavity Surface-emitting LasersPhotonic Integrated CircuitSurface-emitting LasersMicroelectronicsOptoelectronicsCompound Semiconductor
A planarity preserving method for the definition of vertical-cavity surface-emitting lasers (VC-SEL) is described. A strained-layer InGaAs quantum well VC-SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm2 and efficient cw operation. This method facilitates large-scale integration of VC-SEL devices.
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GaInAsP/InP Surface Emitting Injection Lasers
H. Soda, Kenichi Iga, Chiyuki Kitahara et al. · Japanese Journal of Applied Physics · 1979 · 539 citations
Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes
Y.H. Lee, J. L. Jewell, Axel Scherer et al. · Electronics Letters · 1989 · 182 citations