Applied Physics Letters · 1987 · 52 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser OpticsLaser PhysicsLight-emitting DiodesSemiconductor HeterostructuresSemiconductor LasersCarrier ConfinementDiode Laser Threshold CurrentEdge-emitting Laser DiodesEdge-emitting LasersHeterostructure DesignHeterostructure LasersMinority Carrier InjectionSemiconductor Laser Diodes
Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.
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Disorder of an AlAs-GaAs superlattice by impurity diffusion
W. D. Laidig, N. Holonyak, M. D. Camras et al. · Applied Physics Letters · 1981 · 599 citations