High-efficiency TEM continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain

Abstract

We report room-temperature, continuous-wave (cw), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, we observe the first experimental evidence for reduced cw lasing threshold (as low as 2×104 W/cm2 ) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 Å) have been measured. A very high quality beam with low divergence (2.5°) and circular TEM00 profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.