Applied Physics Letters · 1984 · 20 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsSemiconductor MaterialsThin FilmsCrystallization ProcessesOptical Thin FilmsSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin Film Optical PropertiesAntireflection CoatingsCrystalline SiliconGrain BoundariesSiliconSilicon DioxideSilicon Thin FilmsSilicon-on-insulator ProcessingSingle-crystal Silicon
20-μm-wide, 1-mm-long, single-crystal Si films on SiO2 have been produced using a cw Ar laser beam split by a birefringent quartz plate. The single-scan recrystallized region width has been widened by multiple beam splitting. The resultant single-crystal region obtained by multiple scan from the seed is a 90-μm-wide and 100-μm-long area with rare grain boundaries. This split beam method uses the stable and highly efficient TEM00 mode and needs no prepatterned antireflection layers.
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cw laser recrystallization of 〈100〉 Si on amorphous substrates
J. F. Gibbons, K. F. Lee, T. J. Magee et al. · Applied Physics Letters · 1979 · 83 citations