2010 · 16 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsDopant ImplantationJunction Field-effect TransistorsLateral Electric Field EffectsSemiconductor Doping ProfilesTunnel Junction DesignTunneling Field-effect Transistors
All-Silicon Tunneling Field Effect Transistors (TFETs) with relatively high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> values were fabricated by inserting an N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> pocket between source and channel to achieve sharpening or steepening of the source dopant profile. The source-side pocket or Dopant Profile Steepening Implant (DPSI) can be tuned to engineer the junction abruptness, boost the lateral electric field at the tunnel region, and reduce the tunneling width for I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> enhancement. By designing the DPSI dose and energy, we demonstrate that further enhancement in I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> values can be achieved.
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Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
Joerg Appenzeller, Yu-Ming Lin, Joachim Knoch et al. · Physical Review Letters · 2004 · 880 citations
Low-subthreshold-swing tunnel transistors
Qin Zhang, Wei Zhao, Alan Seabaugh · IEEE Electron Device Letters · 2006 · 652 citations