Applied Physics Letters · 2000 · 36 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsPressure SensorsSemiconductor Device MaterialsStrain EngineeringStrain SensorsTransducer TechnologyGallium Nitride (Gan) MaterialsPiezoresistive MaterialsPiezoresistive SensingPiezoresistive SensorsSchottky BarriersSchottky ContactsSensitivityTransducers
We report on a strong piezoresistive effect in metal–semiconductor–metal structures fabricated on p-type GaN. The maximum measured gauge factor was 260, which is nearly two times larger than for piezoresistive silicon transducers. We attribute this large sensitivity to applied strain to the combination of two mechanisms: (i) a high piezoresistance of bulk p-GaN and (ii) a strong piezoresistive effect in a Schottky contact on p-GaN. The obtained results demonstrate that GaN-based structures can be suitable for stress/pressure sensor applications.
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Piezoresistive effect in wurtzite <i>n</i>-type GaN
Alexei Bykhovski, V. V. Kaminski, M. S. Shur et al. · Applied Physics Letters · 1996 · 201 citations
Piezoresistive effect in GaN–AlN–GaN structures
R. Gaška, Jinwei Yang, Alexei Bykhovski et al. · Applied Physics Letters · 1997 · 46 citations