Concepedia

6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

M. Aydaraliev, N. V. Zotova, S.A. Karandashov, B. A. Matveev, M. A. Remennyĭ, N. M. Stus’, G. N. Talalakin, W. W. Bewley, J. R. Lindle, J. R. Meyer

Applied Physics Letters · 2002 · 11 citations · 8 references

Abstract

An InGaAsSb/InAsSbP double-heterostructure laser (λ=3.3 μm) with Gd-doped active region exhibited 6 W (35 A and 150 ns) of output power in pulsed mode at 78 K. The power, spectral, and electrical characteristics are presented, along with their temperature dependences.

References

8

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W. W. Bewley, Hwang-Jin Lee, I. Vurgaftman et al. · Applied Physics Letters · 2000 · 108 citations

Engineering, Electrical Engineering, Optoelectronics +16

Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells

J. R. Lindle, J. R. Meyer, C. A. Hoffman et al. · Applied Physics Letters · 1995 · 63 citations

Engineering, Materials Science, Optoelectronics +16

High CW power (>200 mW/facet) at 3.4 µmfrom InAsSb/InAlAsSb strained quantum well diode lasers

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Engineering, Materials Engineering, Materials Science +17

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Engineering, Materials Engineering, Materials Science +17

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H. Lee, L. J. Olafsen, R. Menna et al. · Electronics Letters · 1999 · 38 citations

Engineering, Electrical Engineering, Optoelectronics +16