S.A. Karandashov

Room temperature InAs photodiode–InGaAs LED pairs for methane detection in the mid-IR

B. A. Matveev, M. Aidaraliev, N. V. Zotova et al. · Sensors and Actuators B Chemical · 1998 · 45 citations

Engineering, Electrical Engineering, Electronic Materials +10

Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

M. Aydaraliev, N. V. Zotova, S.A. Karandashov et al. · Semiconductor Science and Technology · 1993 · 33 citations

Engineering, Materials Engineering, Materials Science +17

InAsSbP/InAs LEDs for the 3.3–5.5 µm spectral range

B. A. Matveev, N. V. Zotova, Jouko Malinen et al. · IEE Proceedings - Optoelectronics · 1998 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-[micro sign]m spectral region

B. A. Matveev, M. Aydaraliev, N. V. Zotova et al. · IEE Proceedings - Optoelectronics · 2003 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

M. Aydaraliev, N. V. Zotova, S.A. Karandashov et al. · Applied Physics Letters · 2002 · 11 citations

Engineering, Electrical Engineering, Materials Science +17