Publication | Closed Access
InAsSbP/InAs LEDs for the 3.3–5.5 µm spectral range
28
Citations
5
References
1998
Year
PhotonicsCarbon DioxideOptical MaterialsElectronic DevicesEngineeringSolid-state LightingPhotoluminescenceOptical PropertiesOptoelectronic MaterialsApplied PhysicsNew Lighting TechnologyRoom-temperature LedsOptoelectronic DevicesInassbp/inas LedsLpe Grown InassbOptoelectronicsOptical Sensors
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.
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