N. M. Stus’

Current crowding in InAsSb light-emitting diodes

V. K. Malyutenko, O. Yu. Malyutenko, O.D. Podoltsev et al. · Applied Physics Letters · 2001 · 41 citations

Engineering, Electrical Engineering, Materials Science +16

Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

M. Aydaraliev, N. V. Zotova, S.A. Karandashov et al. · Semiconductor Science and Technology · 1993 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers?

B. A. Matveev, S. A. Karandashev, G. N. Talalakin et al. · IEE Proceedings - Optoelectronics · 2002 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Gas analyzer based on semiconducting elements

N. P. Esina, N. V. Zotova, I. I. Markov et al. · Journal of Applied Spectroscopy · 1985 · 20 citations

Natural Sciences, Chemistry, Materials Science +12

Flip-chip LEDs with deep mesa emitting at 4.2 µm

N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev et al. · Semiconductors · 2006 · 18 citations

Engineering, Computer Engineering, Electrical Engineering +14