A. Rybaltowski

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Patrick Kung, A. Saxler, D. Walker et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 47 citations · Full text

Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

Brandon Lane, Donghai Wu, A. Rybaltowski et al. · Applied Physics Letters · 1997 · 44 citations

Engineering, Laser Science, Laser Applications +17

Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser

S. Slivken, C. Jelen, A. Rybaltowski et al. · Applied Physics Letters · 1997 · 43 citations

Engineering, Laser Science, Laser Applications +17

InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor deposition

Donghai Wu, E. Kaas, J. Diaz et al. · IEEE Photonics Technology Letters · 1997 · 29 citations

Wide-bandgap Semiconductor, Low Internal Loss, Optical Materials +20

InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition

J. Diaz, H. Yi, A. Rybaltowski et al. · Applied Physics Letters · 1997 · 23 citations · Full text

Optical Materials, Engineering, Laser Science +19