etching by<b><i>M</i></b>= 0 helicon plasma

Abstract

Etching characteristics in three different modes employing an M = 0 helicon plasma were compared. It was concluded that high selectivity could not be realized in the high source power operation mode in principle. The comparison between the time-modulated discharge mode and the low source power operation mode in the continuous discharge revealed that almost identical etching characteristics could be obtained if, and only if, the imposed source power in the continuous discharge was equal to the net source power in the time-modulated discharge. It was also confirmed that the degree of dissociation of process gases could be controlled by adjusting the source power in a continuous discharge by an M = 0 helicon plasma.