Doping of InSb thin films with elements of groups II and VI

New Set of Tetrahedral Covalent Radii

J. A. Van Vechten, J. C. Phillips · Physical review. B, Solid state · 1970 · 317 citations

Natural Sciences, Chemistry, Physics +16

Growth of III–V semiconductors by molecular beam epitaxy and their properties

A.Y. Cho · Thin Solid Films · 1983 · 261 citations

Engineering, Materials Engineering, Materials Science +14

Theoretical study of native defects in III-V semiconductors

P. J. Lin‐Chung, T. L. Reinecke · Physical review. B, Condensed matter · 1983 · 88 citations

Natural Sciences, Materials Science, Physics +17

Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects

R. Heckingbottom, Graham J. Davies, K. A. Prior · Surface Science · 1983 · 62 citations

Engineering, Materials Engineering, Materials Science +14

Carrier mobility and field effect in thin indium antimode films

C.H. Ling, J.H. Fisher, J.C. Anderson · Thin Solid Films · 1972 · 56 citations

Natural Sciences, Electrical Engineering, Materials Science +16