Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

Abstract

A correlation between channel hot-carrier induced degradation is conventional-drain NMOSFETS and radiation-induced transconductance (g/sub m/) degradation is described. The device lifetime, tau /sub HE/, was proportional to the 1.5 power D)/sub EFF/, where D/sub EFF/ is the radiation dose when Delta g/sub m//g/sub m/=0.5. These results indicate that radiation-induced interface trapping is a strong indicator of hot-electron-device lifetime. The proposed radiation test can be applied to devices with both radiation-hard and radiation-soft field oxide. Initial results on lightly-doped-drain (LDD) devices indicate that correlation between hot-electron degradation and radiation-induced interface trapping is strongly dependent on the design of the LDD.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>