Basic parameters and models in simulation of CVD diamond devices

The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications

R.J. Trew, J.B. Yan, P. Möck · Proceedings of the IEEE · 1991 · 360 citations

Engineering, Materials Engineering, Materials Science +17

The boron acceptor in diamond

K. Thonke · Semiconductor Science and Technology · 2003 · 160 citations

Natural Sciences, Materials Science, Physics +17

High hole mobility in boron doped diamond for power device applications

Pierre‐Nicolas Volpe, Julien Pernot, Pierre Muret et al. · Applied Physics Letters · 2009 · 148 citations

Natural Sciences, Materials Science, Physics +9

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Susanna Reggiani, M. Valdinoci, Luigi Colalongo et al. · IEEE Transactions on Electron Devices · 2002 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications

T.H. Borst, O. Weis · physica status solidi (a) · 1996 · 129 citations

Engineering, Materials Engineering, Materials Science +17