Journal of The Electrochemical Society · 1968 · 22 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDopingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor Thin FilmsSilicon MaterialsThin Film EtchingDiffusion In Semiconductor Thin FilmsDiffusion In SemiconductorsMaskingNitride Thin FilmsSiliconSilicon DopingSilicon NitrideSilicon Thin Films
A qualitative study of the masking properties of thin (≤1500Aå) silicon nitride and silicon oxynitride films on Si is presented. A range of diffusion conditions was studied for doping sources including B, P, Ga, and As. Silicon nitride was not found to be a diffusion mask for all conditions. Conditions under which it can be expected to mask are specified.