Migration of Ga atoms during Si molecular beam epitaxial growth on a Ga-adsorbed Si(111) surface

Surfactants in epitaxial growth

M. Copel, M. C. Reuter, Efthimios Kaxiras et al. · Physical Review Letters · 1989 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Defect self-annihilation in surfactant-mediated epitaxial growth

M. Horn‐von Hoegen, F. K. LeGoues, M. Copel et al. · Physical Review Letters · 1991 · 235 citations

Engineering, Materials Engineering, Materials Science +17

Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffraction

Masakazu Ichikawa, Takahisa Doi · Applied Physics Letters · 1987 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +17

Surface states on Si(111)√3¯×√3¯-In: Experiment and theory

J. M. Nicholls, P. M�rtensson, G. V. Hansson et al. · Physical review. B, Condensed matter · 1985 · 116 citations

Natural Sciences, Materials Science, Physics +13

Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kinetics

Gerhard Meyer, Bert Voigtländer, Nabil M. Amer · Surface Science · 1992 · 91 citations

Natural Sciences, Materials Engineering, Materials Science +16