Takahisa Doi - Concepedia

Author

Takahisa Doi

Hitachi (Japan)

Also Known As

T Doi, T. Doi, Takahisa DOI, Takahisa Doi, Takahisa Doi Takahisa Doi

Publications

574

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)

About

Takahisa Doi is an author at Hitachi (Japan) specializing in applied physics, engineering, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	15	520
2	Applied Physics	14	15	520
3	Materials Science	12	13	446
4	Physics	8	8	304
5	Electrical Engineering	4	4	117

Takahisa Doi

Publications

520

Citations

H-Index

Page 1

	Year	Citations
Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffraction Masakazu Ichikawa, Takahisa Doi Applied Physics Letters Materials ScienceSurface CharacterizationEpitaxial GrowthEngineeringCrystalline Defects	1987	118
Study of Si(001) 2×1 domain conversion during direct current and radiative heatings Masakazu Ichikawa, Takahisa Doi Applied Physics Letters Domain ConversionRadiative Heat TransferEngineeringSilicon On InsulatorSemiconductor Device	1992	59
Observation of Si(111) and gold-deposited Si(111) surfaces using micro-probe reflection high-energy electron diffraction Masakazu Ichikawa, Takahisa Doi, Kazunobu Hayakawa Surface Science Materials ScienceSurface CharacterizationEngineeringGold-deposited SiScanning Probe Microscopy	1985	52
Observation of Surface Micro-Structures by Micro-Probe Reflection High-Energy Electron Diffraction Masakazu Ichikawa, Takahisa Doi, Mikio Ichihashi, Japanese Journal of Applied Physics Materials ScienceEngineeringElectron MicroscopyPhysicsMicroscopy	1984	49
Observation of electromigration effect upon Si-MBE growth on Si(001) surface Masakazu Ichikawa, Takahisa Doi Vacuum Materials ScienceEpitaxial GrowthElectromigration EffectEngineeringElectromigration Technique	1990	38
Diffraction microscopy using 20kV electron beam for multiwall carbon nanotubes O. Kamimura, Kota Kawahara, Takahisa Doi, Applied Physics Letters Materials ScienceDiffraction PatternEngineeringElectron MicroscopyNanomaterials	2008	32
Microscopic observation of Si MBE on Si(001) surface using microprobe RHEED Takahisa Doi, Masakazu Ichikawa Journal of Crystal Growth Materials ScienceSurface CharacterizationEngineeringMicrofabricationMicroprobe Rheed	1989	26
Systematic change in surface structures on Si(111) clean surfaces with temperature Akitoshi Ishizaka, Takahisa Doi Philosophical Magazine Letters Materials ScienceSurface CharacterizationEngineeringClean SurfacesCrystalline Defects	1992	23
Activation energies of Si adsorbate diffusion on a Si(001) surface Takahisa Doi, Masakazu Ichikawa, Shigeyuki Hosoki, Surface Science Materials ScienceSurface CharacterizationEngineeringSurface AnalysisSurface Science	1995	23
High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon M. Tamura, S. Shukuri, Tohru Ishitani, Japanese Journal of Applied Physics Materials ScienceElectrical EngineeringImplantation ConditionsFib ImplantationFocused-ion-beam Boron Implantation	1984	22

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