Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kinetics

Surfactants in epitaxial growth

M. Copel, M. C. Reuter, Efthimios Kaxiras et al. · Physical Review Letters · 1989 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)-(7×7)

Ulrich Köhler, J. E. Demuth, Robert J. Hamers · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +17

Defect self-annihilation in surfactant-mediated epitaxial growth

M. Horn‐von Hoegen, F. K. LeGoues, M. Copel et al. · Physical Review Letters · 1991 · 235 citations

Engineering, Materials Engineering, Materials Science +17

Origins of stress on elemental and chemisorbed semiconductor surfaces

Robert D. Meade, David Vanderbilt · Physical Review Letters · 1989 · 172 citations

Natural Sciences, Chemistry, Materials Science +17

Thin epitaxial Ge−Si(111) films: Study and control of morphology

P. M. J. Marée, Kosuke Nakagawa, F.M. Mulders et al. · Surface Science · 1987 · 161 citations

Natural Sciences, Materials Science, Physics +11