Effect of Channel Length and Width on NBTI in Ultra Deep Sub-Micron PMOSFETs

Abstract

The effects of channel length and width on the degradation of negative bias temperature instability (NBTI) are studied. With the channel length decreasing, the NBTI degradation increases. As the channel edges have more damage and latent damage for the process reasons, the device can be divided into three parts: the gate and source overlap region, the middle channel region, and the gate and drain overlap region. When the NBTI stress is applied, the non-uniform distribution of the generated defects in the three parts will be generated due to the inhomogeneous degradation. With the decreasing channel length, the channel edge regions will take up a larger ratio to the middle channel region and the degradation of NBTI is enhanced. The channel width also plays an important role in the degradation of NBTI. There is an inflection point during the decreasing channel width. There are two particular factors: the lower vertical electric field effect for the thicker gate oxide thickness of the shallow trench isolation (STI) edge and the STI mechanical stress effecting on the NBTI degradation. The former reduces and the latter intensifies the degradation. Under the mutual compromise of the both factors, when the effect of the STI mechanical stress starts to prevail over the lower vertical electric field effect with the channel width decreasing, the inflection point comes into being.