Concepedia
Solid-State Electronics · 2004 · 29 citations · 19 references
Materials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsSemiconductor MaterialSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsElectrical PropertiesSemiconductor Device
19
MOS (Metal Oxide Semiconductor) Physics and Technology
K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations
Materials Science, Semiconductors, Engineering +6
A single-frequency approximation for interface-state density determination
Winfield Hill, C. C. Coleman · Solid-State Electronics · 1980 · 724 citations
Single-frequency Approximation, Engineering, Physics +11
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
Byoung Hun Lee, Laegu Kang, R. Nieh et al. · Applied Physics Letters · 2000 · 605 citations
Engineering, Thin Film Process Technology, Semiconductor Device +18
Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables
R. R. Razouk, Bruce E. Deal · Journal of The Electrochemical Society · 1979 · 238 citations
Engineering, Oxidation Resistance, Thermal Oxidation +16
Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application
Wen-Jie Qi, R. Nieh, Byoung Hun Lee et al. · Applied Physics Letters · 2000 · 172 citations
Engineering, Gate Dielectric Application, Reliability Characteristics +19