Si(<i>L</i> <i>V</i> <i>V</i>) Auger spectra of amorphous Si-oxide, Si-nitride, and Si-oxinitride

Abstract

For amorphous SiO2 and Si3N4 the Auger spectra were measured and an interpretation of the Si(LVV) spectra is given based upon electron energy-level schemes, derived from electron energy-loss spectroscopy results obtained at the same samples. For Si-nitride the effect of oxygen content (O/N from 0.02 to 1) and Ar+ ion bombardment was studied and it is shown that discrepancies between the spectra of different authors are mainly due to these effects.