Minority carrier transport in carbon doped gallium arsenide

Abstract

Minority carrier electron mobilities and diffusion lengths in p-type C-doped GaAs have been measured at room temperature and 77 K using the zero field time of flight (ZFTOF) technique on p+–n structures with p+ carrier concentrations of 1.1×1019, 6.0×1018, 1.8×1018 cm−3, which were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) using CCl4 as the dopant. The electron mobilities obtained are higher than those reported for Be-doped MBE GaAs but lower than those reported for Ge-doped, LPE GaAs, while the diffusion lengths are similar to those found in similar concentration Be-doped samples.