EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300

Abstract

The major challenge for EUV resists at 22 nm half-pitch and below continues to be simultaneously achieving resolution, sensitivity, and line-width roughness (LWR) targets. An ongoing micro-exposure tool (MET) based evaluation of leading resists throughout 2011 shows that incremental progress toward meeting requirements continues apace, with best-of-breed candidates now capable of limiting 19 nm half-pitch resolution at sensitivities near or below 20 mJ/cm² and LWR below 4 nm 3σ through process window. Evaluation of a selection of leading resists using an ASML NXE:3100 2nd generation full-field exposure tool demonstrates key performance improvements vs. the previous process-of- record (POR) setup resist including enhanced process window at 22 nm half-pitch and better contact hole uniformity. Champion limiting resolution performance for chemically amplified resists at a relaxed sensitivity specification has advanced to 16 nm half-pitch for both MET and full-field exposures.