Publication | Closed Access
Defect reduction of SiN x embedded m -plane GaN grown by hydride vapor phase epitaxy
11
Citations
22
References
2014
Year
Materials EngineeringSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineeringSin XApplied PhysicsDefect ReductionGan Power DeviceM -Plane Gan
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