EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice ModelingDopingIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsChannel Doping EffectsGate-dependent Current-voltage Behavior
Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I/sub on//I/sub off/ ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.
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Jong‐Tae Park, J.-P. Colinge, C.H. Diaz · IEEE Electron Device Letters · 2001 · 256 citations
Engineering, Computer Engineering, Electrical Engineering +16
Modeling of ultrathin double-gate nMOS/SOI transistors
P. Francis, A. Terao, Denis Flandre et al. · IEEE Transactions on Electron Devices · 1994 · 156 citations