Realization of 850V breakdown voltage LDMOS on Simbond SOI - Concepedia

Concepedia

Publication | Closed Access

Realization of 850V breakdown voltage LDMOS on Simbond SOI

19

Citations

7

References

2011

Year

Zhongjian Wang, Xinhong Cheng, Dawei He, Chao Xia, Dawei Xu, Yuehui Yu, Dong Zhang, Yanying Wang, Yuqiang Lv, Dawei Gong,

Microelectronic Engineering

Electrical EngineeringEngineeringPower DeviceBreakdown Voltage LdmosMicroelectronics

References

	Year	Citations

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