Sharp 1.54 µm luminescence from porouserbium implanted silicon

Abstract

Sharp luminescence at 1.54 µm from erbium doped porous silicon has been observed. The silicon was made porous after implantation of high doses of erbium and oxygen into p-type Czochralski silicon. The erbium related luminescence from porous silicon is an order of magnitude more intense than that from erbium doped single crystal silicon.