Identification of donors, acceptors, and traps in bulk-like HVPE GaN

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Atomic geometry and electronic structure of native defects in GaN

Jörg Neugebauer, Chris G. Van de Walle · Physical review. B, Condensed matter · 1994 · 785 citations

Natural Sciences, Materials Science, Physics +17

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

D. C. Look, R. J. Molnar · Applied Physics Letters · 1997 · 361 citations

Engineering, Materials Science, Physics +17

Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy

Sung S. Park, Il-W. Park, Sung Ho Choh · Japanese Journal of Applied Physics · 2000 · 157 citations

Engineering, Materials Engineering, Materials Science +16

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki et al. · Applied Physics Letters · 2003 · 128 citations

Engineering, Materials Science, Physics +17