Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing

Abstract

The intermixing process of InGaAs/InP multiple-quantum-well(MQW) structure by thermal annealing at 500-700°C is investigated. Optical measurement appears to show that the MQW structure is unstable in the annealing above 700°C. SIMS and X-ray analysis, however, reveal that the MQW structure remains basically intact and that this intermixing process is mainly attributable to a minor diffusion of P atoms inducing a lattice-mismatched layer. The pronounced optical peak shifts can be roughly explained on the basis of this minor diffusion process.