Applied Physics Letters · 1987 · 149 citations · 22 references
EngineeringMaterials SciencePhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsStark EffectOptical Absorption In Quantum WellsPhotoconductivityQuantum Confined Stark EffectQuantum Well Band StructureQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well HeterostructuresQuantum Well Structures
We report the first observation of the quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy. The effect is observed both in transmission and photoconductivity measurements. The observed spectral shift agrees with the theory.
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