IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity

Abstract

Disk-shaped IR-red (Eg ∼1.61 eV) GaAs-AlAs superlattice lasers (41 Lz ∼45-Å GaAs layers, 40 LB ∼150-Å AlAs layers) are demonstrated (cw 300 K) that are monolithically integrated into rectangular yellow-gap AlxGa1−xAs [x∼LB/(Lz+LB), EgX∼2.08 eV] cavities. The yellow-gap AlxGa1−xAs (x∼0.77) is generated by low-temperature Zn diffusion (575 °C, 30 min), which disorders selected portions of the superlattice [portions complementary to regions (disks) masked by Si3N4].