physica status solidi (a) · 2002 · 21 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGallium Nitride Power DevicesGan-based High-frequency DevicesPower DensitySilicon CarbideSilicon Carbide (Sic) Materials
Large periphery Al0.25Ga0.75N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation fmax varies from 27–79 GHz. With these devices a power density of 5.2 W/mm and a power level of 13.8 W is achieved at 2 GHz.
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Aging behaviour of AlGaN/GaN HFETs withadvanced ohmic and Schottky contacts
J. Hilsenbeck, E. Nebauer, J. Würfl et al. · Electronics Letters · 2000 · 27 citations