Influence of substrate orientation on surface segregation process in silicon-MBE

Arbitrary doping profiles produced by Sb-doped Si MBE

J. C. Bean · Applied Physics Letters · 1978 · 84 citations

Engineering, Materials Engineering, Materials Science +17

Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si

A. A. van Gorkum, Kiyokazu Nakagawa, Y. Shiraki · Japanese Journal of Applied Physics · 1987 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

RHEED studies of Si(100) surface structures induced by Ga evaporation

Tsunenori Sakamoto, Hitoshi Kawanami · Surface Science · 1981 · 59 citations

Natural Sciences, Materials Science, Physics +16

RHEED studies of Si(100) surface structures induced by Ga evaporation

Tsunenori Sakamoto, Hitoshi Kawanami · Surface Science Letters · 1981 · 29 citations

Natural Sciences, Materials Science, Physics +16

MBE-Related Surface Segregation of Dopant Atoms in Silicon

Kiyokazu Nakagawa, Masanobu Miyao, Y. Shiraki · Japanese Journal of Applied Physics · 1988 · 19 citations

Natural Sciences, Materials Science, Physics +17