Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 14 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicrofabricationSemiconductor DevicesThin FilmsElectron Beam LithographyEtching ProcessesMagnetic Thin FilmsThin-film MaterialsBakingCritical Dimension ControlLine Edge Roughness AnalysisLine RoughnessLine-edge RoughnessResist PatterningThin Film Resist ProcessingThin-film Magnetic Materials
We have coupled the SAFIER™ (shrink assist film for enhanced resolution) process with electron-beam lithography for the fabrication of the write top pole structures for thin-film heads. The SAFIER™ process is designed to physically shrink trench patterns and contact holes with very little deterioration of the resist profile. In this article, we will present the experimental results of the SAFIER™ process for the fabrication of the write top pole. We investigate the SAFIER™ process concerning several key processing issues, including shrink resolution capability, repetition of the SAFIER™ process, shrink-sensitive baking conditions, resist sidewall profile, and line edge roughness (LER) after shrinking of the trench. The experimental results show that this process not only shrinks the size of resist trenches and contact holes, but also improves LER and critical dimension variation. We demonstrate the capability of printing top pole structures with pole widths of sub-20nm in a 0.30-μm-thick resist (aspect ratio>15:1), and electroplated top pole structures of 50nm in a 0.50-μm-thick resist (aspect ratio=10:1).
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