Applied Physics Letters · 1976 · 28 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor HeterostructuresSemiconductor LasersDistributed Bragg Reflector LasersDouble HeterostructuresEmission SpectrumHeterostructure LasersHeterostructuresLiquid Phase EpitaxySemiconductor Laser DiodesSpontaneous Emission
Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid-phase epitaxy. For gratings with a period of 3700 Å, the diodes lased at 8770 Å, which corresponds to the high-absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm2 have been realized.
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Optical waveguides in GaAs–AlGaAs epitaxial layers
R. A. Logan, F. K. Reinhart · Journal of Applied Physics · 1973 · 167 citations