GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

Abstract

Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340 °K under pulsed operation. The lowest threshold current density is 3 kA/cm2 at 300 °K.