Semiconductor Science and Technology · 1993 · 14 citations · 9 references
Materials ScienceMaterials EngineeringIi-vi SemiconductorMaterial AnalysisEngineeringPhysicsCrystal Growth TechnologyX-ray DiffractionApplied PhysicsCondensed Matter PhysicsCdte/hgte SuperlatticesPost-growth-annealed SamplesInterdiffusion CoefficientsMolecular Beam EpitaxyEpitaxial GrowthCrystallographyMicrostructure
Experiments have been designed to measure interdiffusion coefficients in CdTe/HgTe (001) superlattices grown by molecular beam epitaxy. The interdiffusion coefficients are deduced from double crystal X-ray diffraction on post-growth-annealed samples. The annealings are realized in the 200-240 degrees C range under Hg saturated pressure. The results indicate that interdiffusion is dependent on concentration. The authors calculate diffused profiles from an expression on D(c,T), and simulate the corresponding X-ray spectra to fit them with the experimental ones.
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