R. E. Mallard

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Planar Inp Substrates, Electron Microscopy +17

GaSb heterostructures grown by MOVPE

E. T. R. Chidley, S. K. Haywood, R. E. Mallard et al. · Journal of Crystal Growth · 1988 · 49 citations

Materials Engineering, Engineering, Gasb Heterostructures +4

Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD

E. J. Thrush, J. P. Stagg, M.A. Gibbon et al. · Materials Science and Engineering B · 1993 · 46 citations

Engineering, Compound Semiconductor, Applied Physics +4

Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

E. J. Thrush, M.A. Gibbon, J. P. Stagg et al. · Journal of Crystal Growth · 1992 · 41 citations

Materials Science, Materials Engineering, Electrical Engineering +9

CdTe/ZnTe: Critical thickness and coherent heterostructures

J. Cibért, R. André, C. Deshayes et al. · Superlattices and Microstructures · 1991 · 38 citations

Ii-vi Semiconductor, Engineering, Applied Physics +5