Phase-locked RHEED oscillations during MBE growth of GaAs and AlxGa1−xAs

Dynamics of film growth of GaAs by MBE from Rheed observations

J.H. Neave, B.A. Joyce, Peter J. Dobson et al. · Applied Physics A · 1983 · 955 citations

Ii-vi Semiconductor, Engineering, Physics +8

Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

J.H. Neave, Peter J. Dobson, B.A. Joyce et al. · Applied Physics Letters · 1985 · 752 citations

Optical Materials, Engineering, Vicinal Surfaces +23

Phase-Locked Epitaxy Using RHEED Intensity Oscillation

Tsunenori Sakamoto, Hideo Funabashi, Kimihiro Ohta et al. · Japanese Journal of Applied Physics · 1984 · 140 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +13

Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensity

S. V. Ghaisas, A. Madhukar · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 99 citations

Engineering, Crystal Growth Technology, Mbe Growth +25

Self-masking selective epitaxy by molecular-beam method

Seiichi Nagata, Tsuneo Tanaka · Journal of Applied Physics · 1977 · 98 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15