S. V. Ghaisas

The nature of molecular beam epitaxial growth examined via computer simulations

A. Madhukar, S. V. Ghaisas · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · 1988 · 176 citations

Engineering, Crystal Growth Technology, Mbe Growth +21

Scale invariance and dynamical correlations in growth models of molecular beam epitaxy

S. Das Sarma, C. J. Lanczycki, R. Kotlyar et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 1996 · 136 citations

Engineering, Dynamical Correlations, Crystal Growth Technology +19

Solid-on-solid rules and models for nonequilibrium growth in 2+1 dimensions

S. Das Sarma, S. V. Ghaisas · Physical Review Letters · 1992 · 122 citations

Detailed Stochastic Simulation, Critical Phenomenon, Engineering +13

Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam Epitaxy

S. V. Ghaisas, A. Madhukar · Physical Review Letters · 1986 · 111 citations

Engineering, Crystal Growth Technology, Computational Chemistry +22

Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensity

S. V. Ghaisas, A. Madhukar · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 99 citations

Engineering, Crystal Growth Technology, Mbe Growth +25