Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy

Multiplication Processes for Slow Moving Dislocations

F. C. Frank, W. T. Read · Physical Review · 1950 · 581 citations

Engineering, Dislocation Interaction, Severe Plastic Deformation +6

Etching of Dislocations on the Low-Index Faces of GaAs

M. S. Abrahams, C. J. Buiocchi · Journal of Applied Physics · 1965 · 338 citations

Semiconductors, Materials Science, Engineering +14

Defect structure introduced during operation of heterojunction GaAs lasers

P. M. Petroff, R. L. Hartman · Applied Physics Letters · 1973 · 311 citations

Photonics, Engineering, Dislocation Interaction +12

Electron Microscopic Images of Single and Intersecting Stacking Faults in Thick Foils. Part I: Single Faults

R. Gevers, A. Art, S. Amelinckx · physica status solidi (b) · 1963 · 176 citations

Engineering, Microscopy, Anomalous Absorption +18

Defect structure of degraded GaAlAs-GaAs double heterojunction lasers

P. W. Hutchinson, P. S. Dobson · Philosophical magazine · 1975 · 96 citations

Semiconductors, Photonics, Interstitial Nature +14