Concepedia

Osamu Ryuzan

OR

11

Publications

274

Citations

11

H-Index

1961

Active since

Affiliations

Fujitsu (Japan)(Current)

Fujitsu (United States)

Osamu Ryuzan is an author at Fujitsu (Japan) specializing in applied physics, engineering, and electrical engineering.

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Publications per year

1961–1984

11

Publications

11

Photoluminescence Study of Carbon Doped Gallium Arsenide

Masashi Ozeki, Kenya Nakai, K. Dazai et al. · Japanese Journal of Applied Physics · 1974 · 50 citations

, , +14

LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP

Kazuo Nakajima, Satoshi Komiya, Kenzo Akita et al. · Journal of The Electrochemical Society · 1980 · 44 citations · Full text

, , +12

Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase

Masashi Ozeki, Kuninori Kitahara, Kenya Nakai et al. · Japanese Journal of Applied Physics · 1977 · 39 citations

, , +16

Vapor-phase epitaxial growth of GaAs in a nitrogen atmosphere

Manabu Ihara, K. Dazai, Osamu Ryuzan · Journal of Applied Physics · 1974 · 37 citations

, , +8

Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy

Tsuyoshi Kotani, Osamu Ueda, Kenzo Akita et al. · Journal of Crystal Growth · 1977 · 21 citations

, , +5

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