Journal of Physics D Applied Physics · 2007 · 23 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsOptoelectronic MaterialsPhotodetectorsQuantum DotsQuantum WellsSemiconductor PhysicsInfrared PhotodetectorsQuantum Dot MaterialsQuantum Dot PhotodetectorsQuantum Well Infrared PhotodetectorsQuantum Well PhotodetectorsSemiconductor Quantum DotsSpectral Response CharacterizationSpectral Response Modeling
We present experimental and theoretical investigations of the bias-dependent spectral shift of the photoresponse in InAs/InxGa1−xAs quantum-dots-in-a-well structures. Experimental results show that the wavelength response of the transition from the quantum dot ground state to quantum well states can be Stark-shifted by ∼15% by changing the applied bias between −1 V and +1 V. A theoretical model based on the 8-band k · p method fits our experimental data well using realistic dot parameters. We also demonstrate an increase in the operating wavelength and a reduced bias-dependent spectral shift for samples containing dots formed by depositing less InAs during growth.
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Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
P. W. Fry, I. E. Itskevich, D. J. Mowbray et al. · Physical Review Letters · 2000 · 523 citations · Full text
Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs
T Walther, A. G. Cullis, David J. Norris et al. · Physical Review Letters · 2001 · 254 citations