Statistics
Publications
7
Citations
224
H-Index
7
Active since
1997
Affiliations
John P. R. David is an author at University of Sheffield specializing in materials science, semiconductor physics, and semiconductor materials.
Publications per year
1997–2015
7
7
Molecular beam epitaxy growth of GaAsBi using As2 and As4
Robert D. Richards, F. Bastiman, C. J. Hunter et al. · Journal of Crystal Growth · 2013 · 63 citations
Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
D.F. Reyes, F. Bastiman, Chris J Hunter et al. · Nanoscale Research Letters · 2014 · 61 citations · Full text
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